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| 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD Chip Device Layout Features Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier 2.0 dBm LO Drive Level 15.0 dB Image Rejection, 10.0 dB Conversion Gain 7x7 mm, QFN General Description Mimix Broadband's 19.0-26.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 15.0 dB image rejection across the band. This device is an image reject sub-harmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7mm QFN surface mount laminate package that is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (IF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.0 VDC 320, 165 mA +0.5 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25o C) Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Output Return Loss RF (S22) Small Signal Conversion Gain IF/RF (S21) LO Input Drive (PLO) Image Rejection 2xLO Leakage @ RF Output Third Order Intercept (OIP3) Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=4.0V, Vg=-0.1V Typical) Supply Current (Id2) (Vd2=4.0V, Vg=-0.1V Typical) Units GHz GHz GHz GHz dB dB dBm dBc dBm dBm VDC VDC VDC mA mA Min. 19.0 19.0 8.0 DC -1.2 Typ. 14.0 10.0 +2.0 20.0 -12.0 +23.0 +4.0 +4.0 -0.1 230 116 Max. 26.0 26.0 14.5 3.0 +4.5 +4.5 +0.3 280 140 Page 1 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD Transmitter Measurements XU1003-QD, Conversion Gain (dB) 20 18 Conversion Gain (dB) 16 14 12 10 8 6 4 2 0 17 19 21 23 25 27 RF Freq (GHz) LSB USB XU1003-QD, Image Rejection (dBc) 0 -5 Image Rejection (dBc) -10 -15 -20 -25 -30 -35 17 19 21 23 25 27 RF Freq (GHz) LSB USB XU1003-QD, 1xLO Leakage (dBm) @ RF port 20 10 1xLO Leakage (dBm) 0 -10 -20 -30 -40 -50 7.5 8.5 9.5 10.5 11.5 12.5 13.5 14.5 1xLO Freq (GHz) 2xLO Leakage (dBm) 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 15 XU1003-QD, 2xLO Leakage (dBm) @ RF port 17 19 21 23 25 27 29 2xLO Freq (GHz) XU1003-QD, Output Intercept Point (OIP3) 40 35 Output IP3 (dBm) 30 25 20 15 10 17 19 21 23 RF (GHz) [IF=2GHz] 25 27 USB LSB Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD Physical Dimensions Application Circuit XU1003-QD Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 3 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD App Note [1] Biasing - This device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=230mA and Vd2=4.0V, Id2=116mA. It is recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.1V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. MTTF Tables (TBD) These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature deg Celsius deg Celsius deg Celsius Rth MTTF Hours FITs C/W C/W C/W E+ E+ E+ E+ E+ E+ Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=230 mA, Id2=116 mA Typical Application XU1003-QD Sideband Reject XB1004 XP1013 IF IN 2 GHz RF Out 21.2-23.6 GHz LO(+2.0dBm) 9.6-10.8 GHz (USB Operation) 11.6-12.8 GHz (LSB Operation) Mimix Broadband MMIC-based 19.0-26.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 26 GHz) Mimix Broadband's 19.0-26.0 GHz XU1003-QD GaAs MMIC Transmitter can be used in saturated radio applications and linear modulation schemes up to 16 QAM. The transmitter can be used in upper and lower sideband applications from 19.0-26.0 GHz. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD App Note [3] USB/LSB Selection - LSB USB For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms. IF2 IF1 For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms. An alternate method of Selection of USB or LSB: USB LSB In Phase Combiner In Phase Combiner -90 o -90o IF2 IF1 IF2 IF1 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 19.0-26.0 GHz GaAs Transmitter QFN, 7x7mm August 2006 - Rev 31-Aug-06 U1003-QD CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. The package is a low-cost plastic package. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Reflow Profile Ramp Up Rate Activation Time and Temperature Time Above Melting Point Max Peak Temperature Time Within 5 C of Peak Ramp Down Rate SnPb 3-4 C/sec 60-120 sec @ 140-160 C 60-150 sec 240 C 10-20 sec 4-6 C/sec Pb Free 3-4 C/sec 60-180 sec @ 170-200 C 60-150 sec 265 C 10-20 sec 4-6 C/sec Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is 100% matt tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (260C reflow) "Pb Free" processes. Part Number for Ordering XU1003-QD-0N00 XU1003-QD-0N0T XU1003-QD-EV1 Description Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in bulk quantity Ni/Au plated RoHS compliant QFN 7x7 44L surface mount package in tape and reel XU1003-QD Evaluation Module We also offer this part with alternative plating options. Please contact your regional sales manager for more information regarding different plating types. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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